elektronische bauelemente SSG4228 6.8a, 30v, r ds(on) 26m ? dual-n enhancement mode power mosfet 18-feb-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g 4228ss ????? ?? ? = date code rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSG4228 provide the designer with the best combination of fast swit ching, ruggedized device design, ultra low on-resistance and cost-effectiveness. features ? low on-resistance ? simple drive requirement ? double-n mosfet package marking code package information package mpq leadersize sop-8 3k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a = 25c 6.8 continuous drain current 3 t a = 70c i d 5.5 a pulsed drain current 1 i dm 40 a power dissipation 1 p d 2 w maximum junction to ambient 3 r ja 62.5 c / w linear derating factor 0.016 w / c operating junction & stor age temperature range t j , t stg -55~150 c sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. g s g s d d d d
elektronische bauelemente SSG4228 6.8a, 30v, r ds(on) 26m ? dual-n enhancement mode power mosfet 18-feb-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss 30 - - v v gs =0v, i d =250 a breakdown voltage temp. coefficient bv ds /t j - 0.03 - v / c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 1 - 3 v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v gs =20v - - 1 a v ds =30v,v gs =0 zero gate voltage drain current i dss - - 25 a v ds =24v,v gs =0 - - 26 v gs =10v, i d =6a drain-source on-resistance 2 r ds(on) - - 40 m ? v gs =4.5v, i d =4a total gate charge 2 q g - 9 15 gate-source charge q gs - 2 - gate-drain (?miller?) charge q gd - 6 - nc i d = 6.8a v ds = 24v v gs = 4.5v turn-on delay time 2 t d(on) - 10 - rise time t r - 9 - turn-off delay time t d(off) - 18 - fall time t f - 6 - ns v ds = 15v i d = 1a v gs = 10v r g = 3.3 ? r d = 15 ? input capacitance c iss - 580 930 output capacitance c oss - 150 - reverse transfer capacitance c rss - 108 - pf v gs =0v v ds =25v f=1.0mhz forward transfer conductance g fs - 15 - s v ds =10v, i d =6a source-drain diode forward on voltage 2 v ds - - 1.3 v i s =1.7a, v gs =0v, t j =25c reverse recovery time 2 t rr - 15 - ns reverse recovery charge q rr - 9 - nc i s =6.8a, v gs =0v dl/dt=100a/ s notes: 1 pulse width limited by max. junction temperature. 2 pulse width 300us, duty cycle 2%. 3 surface mounted on 1 inch2 copper pad of fr4 board; 135c/w when mounted on min. copper pad.
elektronische bauelemente SSG4228 6.8a, 30v, r ds(on) 26m ? dual-n enhancement mode power mosfet 18-feb-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
elektronische bauelemente SSG4228 6.8a, 30v, r ds(on) 26m ? dual-n enhancement mode power mosfet 18-feb-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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